E-mail：2012070230@njupt.edu.cn
教育经历
2007.09-2011.06 南京邮电大学 通信工程专业（学士学位）
2011.09-2017.12 南京邮电大学 有机电子学专业（博士学位）
获奖情况
2013 优秀研究生奖学金
2015-2016 国家留学基金委（CSC）公派研究生奖学金
研究方向
信息技术产业的迅速发展对大容量和快速存储器件提出前所未有的需求，而当前基于传统无机材料 的存储器件正面临尺寸极限的挑战；同时，电子科学技术的日益发展也急需与未来柔性电子电路相兼容 的新型存储器件。
研究方向聚焦于大容量有机场效应晶体管存储器，主要涉及器件结构设计、功能层材料选择和界面 调控、物理化学特性表征、全溶液加工工艺开发、及器件存储机理研究等。
学术成果
1. Li W., Guo F., Ling H., Zhang P., Yi M., Wang L., Wu D., Xie L., Huang W. High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers. Advanced Science 2017, 4, 1700007. (Front Cover)
2. Li W., Guo F., Ling H., Liu H., Yi M., Zhang P., Wang W., Xie L., Huang W. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory. Small 2017, DOI: 10.1002/smll.201701437.
3. Li W., Yi M., Ling H., Guo F., Wang T., Yang T., Xie L., Huang W. Analysis of temperature- dependent electrical transport properties of nonvolatile organic field- effect transistor memories based on PMMA film as charge trapping layer. Journal of Physics D: Applied Physics 2016, 49, 125104.
4. Ling H., Li W., Li H., Yi M., Xie L., Wang L., Ma Y., Bao Y., Guo F., Huang W. Effect of thickness of polymer electret on charge trapping properties of pentacene-based nonvolatile field-effect transistor memory. Organic Electronics 2017, 43, 222-228.
5. Lin J., Li W., Yu Z., Yi M., Ling H., Xie L., Li S., Huang W. π-Conjugation-interrupted hyperbranched polymer electrets for organic nonvolatile transistor memory devices. Journal of Material Chemistry C 2014, 2, 3738-3743.
6. Du Z., Li W., Ai W., Tai Q., Xie L., Cao Y., Liu J., Yi M., Ling H., Li Z., Huang W. Chemoselective reduction of graphene oxide and its application in nonvolatile organic transistor memory devices. RSC Advances 2013, 3, 25788-25791.
7. Shi W., Li W., Yi M., Xie L., Wei W., Huang W. Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. ACTA PHYSICA SINICA 2012, 61, 228502.
8. 卞伟，李雯，张宁，仪明东，解令海，黄维. 有机发光晶体管的研究进展. 科学通报 2013, 58, 1817-1832.
9. Qian Y., Li W., Li W., Xu X., Lin Z., Xie L., Yi M., Huang W. Reversible Optical and Electrical Switching of Air-Stable OFETs for Nonvolatile Multi-Level Memories and Logic Gates. Advanced Electronic Materials 2015, 1, 1500230.
10. Yi M., Xie M., Shao Y., Li W., Ling H., Xie L., Yang T., Fan Q., Zhu J., Huang W. Light programmable/erasable organic field-effect transistor ambipolar memory devices based on the pentacene/PVK active layer. Journal of Material Chemistry C 2015, 3, 5220-5225.
11. Chai Y., Guo Y., Bian W., Li W., Yang T., Yi M., Fan Q., Xie L., Huang W. Progress of flexible organic non-volatile memory field-effect transistors. ACTA PHYSICA SINICA 2014, 63, 027302.
12. Ling H., Zhang C., Chen Y., Shao Y., Li W., Li H., Chen X., Yi M., Xie L., Huang W. Engineering the mobility increment in pentacene based field-effect transistors by fast cooling of polymeric modification layer. Journal of Physics D: Applied Physics 2017, 50, 215107.
13. Yi M., Shu J., Wang Y., Ling H., Song C., Li W., Xie L., Huang W. The effect of porous structure of PMMA tunneling dielectric layer on the performance of nonvolatile floating-gate organic field-effect transistor memory devices. Organic Electronics 2016, 33, 95-101.
14. Ling H., Lin J., Yi M., Liu B., Li W., Lin Z., Xie L., Bao Y., Guo F., Huang W. Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory. ACS Applied Materials & Interfaces 2016, 8, 18969-18977.
15. Wang L., Wang Z., Lin, J., Yang J., Xie L., Yi M., Li W., Ling H., Ou C., Huang W. Long-Term Homeostatic Properties Complementary to Hebbian Rules in CuPc-Based Multifunctional Memristor. Scientific Reports 2016, 6, 35273.
